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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlastrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stostrom Grenzwert surge forward current Grenzlastintegral I t - value 2 VRRM IFRMSM TC = 80C tP = 10 ms, T vj = tP = 10 ms, T vj = 25C 25C Id IFSM 2 It 1600 40 10 300 230 450 260 V A A A A A2s As 2 tP = 10 ms, T vj = 150C tP = 10 ms, T vj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value Tc = 80 C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125C IF IFRM 2 It VCES Tc = 80 C TC = 25 C tP = 1 ms, TC = 25C T C = 80 C IC,nom. IC ICRM Ptot VGES 600 10 20 20 80 +/- 20V V A A A W V 10 20 50 A A A2s Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Andreas Schulz approved by: MN.Hierholzer Tc = 80 C tP = 1 ms IF IFRM 10 20 A A TC = 80 C TC = 25 C tP = 1 ms, TC = 80C TC = 25C VCES IC,nom. IC ICRM Ptot VGES 600 10 20 20 80 +/- 20V V A A A W V date of publication:17.09.1999 revision: 4 1(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, V R = 1600 V I F = 10 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,9 1 8 max. 0,95 0,8 10,5 V V m mA m Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C, min. IC = IC = IC = 10 A 10 A 0,35 mA VGE(TO) Cies 600 V 600 V IGES 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 75 nH 300 V 82 Ohm 75 nH 82 Ohm 360 V 600 A/s ISC Eoff Eon tf td,off tr td,on ICES VCE sat 4,5 - typ. 1,95 2,2 5,5 0,6 0,5 0,8 - max. 2,35 6,5 500 300 V V V nF A mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, VGE = 0V, Tvj = 25C, V CE = Tvj =125C, V CE = VCE = 0V, VGE =20V, Tvj =25C IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = LS = IC = INenn, V CC = LS = tP 10s, VGE 15V, Tvj125C, RG = VCC = dI/dt = VGE = 15V, Tvj = 125C, R G = VGE = 15V, Tvj = 125C, R G = 35 35 30 35 220 230 18 30 0,4 - ns ns ns ns ns ns ns ns mWs 0,3 - mWs 45 - A 2(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LCE RCC'+EE' - typ. 11 max. 100 nH m min. VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, IF=INenn, IF = IF = 10 A 10 A 400A/s 300 V 300 V 400A/s 300 V 300 V 400A/s 300 V 300 V ERQ Qr IRM VF - typ. 1,25 1,2 12 15 0,85 1,35 0,16 0,26 max. 1,7 V V A A As As mWs mWs - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = VGE, Tvj = 25C, min. IC = IC = IC = 10,0 A 10,0 A 0,35mA VGE(TO) Cies 600 V 600 V IGES ICES VCE sat 4,5 - typ. 1,95 2,2 5,5 0,6 0,5 0,8 - max. 2,35 6,5 500 300 V V V nF A mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25C, V CE = VGE = 0V, Tvj = 125C, V CE = VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. IF = IF = 10,0 A 10,0 A VF - typ. 1,25 1,2 max. 1,7 V V min. TC = 25C TC = 100C, R 100 = 493 TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 R/R P25 B25/50 -5 typ. 5 max. 5 20 k % mW K 3375 3(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Tvj Top Tstg Paste=1W/m*K grease=1W/m*K typ. 0,08 0,04 0,08 - max. 1 1,5 2,3 1,5 2,3 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W C C C RthJC - RthCK -40 -40 Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Gewicht weight M Al2O3 225 3 10% G 180 g Nm 4(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 I C = f (VCE) Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 20 18 16 Tj = 25C 14 12 Tj = 125C VGE = 15 V IC [A] 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 20 18 16 14 12 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V I C = f (VCE) Tvj = 125C IC [A] 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] 5(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 I C = f (VGE) Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 20 18 16 14 12 Tj = 25C Tj = 125C VCE = 20 V IC [A] 10 8 6 4 2 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 20 18 16 14 12 Tj = 25C Tj = 125C I F= f (VF) IF [A] 10 8 6 4 2 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] 6(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 E = f (IC), Eoff = f (IC), Erec = f (IC) on Tj = 125C, V GE = 15 V, VCC = 300 V 82 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 1,6 1,4 Eon 1,2 1 0,8 0,6 0,4 0,2 0 0 5 10 Eoff Erec RGon = RGoff = E [mWs] 15 20 25 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 0,6 Eon 0,5 Eoff Erec 0,4 E = f (RG), Eoff = f (RG), Erec = f (RG) on Tj = 125C, V GE = +-15 V , I c = Inenn , VCC = 300 V E [mWs] 0,3 0,2 0,1 0 0 20 40 60 80 100 120 140 RG [] 7(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Z thJC = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 10 Zth-IGBT Zth-FWD ZthJC [K/W] 1 0,1 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) 25 I C = f (VCE) 82 Ohm Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, VGE = 15V, RG = 20 IC,Modul 15 IC,Chip IC [A] 10 5 0 0 100 200 300 400 500 600 700 VCE [V] 8(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 I C= f (VCE) Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 20 18 16 14 12 Tj = 25C Tj = 125C VGE = 15 V IC [A] 10 8 6 4 2 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) Forward characteristic of brake-chopper-FWD (typical) 20 18 16 14 12 Tj = 25C Tj = 125C I F = f (VF) IF [A] 10 8 6 4 2 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] 9(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 I F= f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 20 18 16 14 Tj = 25C 12 Tj = 150C IF [A] 10 8 6 4 2 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[] 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) DB-PIM-9.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM10GP60 Schaltplan/ Circuit diagram 21 22 20 1 2 3 14 23 24 7 13 19 18 4 12 17 16 5 11 10 15 6 NTC 8 9 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM-9.xls |
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